Multiple bonding layers for thin-wafer handling

ABSTRACT

Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

RELATED APPLICATIONS

This application claims the priority benefit of a provisionalapplication entitled MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING,Ser. No. 61/371,517, filed Aug. 6, 2010, incorporated by referenceherein.

FEDERALLY SPONSORED RESEARCH/DEVELOPMENT PROGRAM

This invention was made with government support under contract numberDASG60-01-C-0047 awarded by the U.S. Army Space and Missile DefenseCommand. The United States government has certain rights in theinvention.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention is broadly concerned with novel temporary waferbonding methods utilizing multiple layer bonding systems. The inventivemethods can support a device wafer on a carrier substrate during waferthinning and other backside processing.

2. Description of the Prior Art

Integrated circuits, power semiconductors, light-emitting diodes,photonic circuits, microelectromechanical systems (MEMS), embeddedpassive arrays, packaging interposers, and a host of other silicon- andcompound semiconductor-based microdevices are produced collectively inarrays on wafer substrates ranging from 1-12 inches in diameter. Thedevices are then separated into individual devices or dies that arepackaged to allow practical interfacing with the macroscopicenvironment, for example, by interconnection with a printed wiringboard. It has become increasingly popular to construct the devicepackage on or around the die while it is still part of the wafer array.This practice, which is referred to as wafer-level packaging, reducesoverall packaging costs and allows a higher interconnection density tobe achieved between the device and its microelectronic environment thanwith more traditional packages that usually have outside dimensionsseveral times larger than the actual device.

Until recently, interconnection schemes have generally been confined totwo dimensions, meaning the electrical connections between the deviceand the corresponding board or packaging surface to which it is mountedhave all been placed in a horizontal, or x-y, plane. Themicroelectronics industry has now recognized that significant increasesin device interconnection density and corresponding reductions in signaldelay (as a result of shortening the distance between electricalconnection points) can be achieved by stacking and interconnectingdevices vertically, that is, in the z-direction. Two common requirementsfor device stacking are: (1) thinning of the device in the through-waferdirection from the backside; and (2) subsequently forming through-waferelectrical connections, commonly referred to as through-silicon-vias or“TSVs,” that terminate on the backside of the device. For that matter,semiconductor device thinning has now become a standard practice evenwhen devices are not packaged in a stacked configuration because itfacilitates heat dissipation and allows a much smaller form factor to beachieved with compact electronic products such as cellular telephones.

There is growing interest in thinning semiconductor devices to less than100 microns to reduce their profiles, especially when they or thecorresponding packages in which they reside are stacked, and to simplifythe formation of backside electrical connections on the devices. Siliconwafers used in high-volume integrated circuit production are typically200 or 300 mm in diameter and have a through-wafer thickness of about750 microns. Without thinning, it would be nearly impossible to formbackside electrical contacts that connect with front-side circuitry bypassing the connections through the wafer. Highly efficient thinningprocesses for semiconductor-grade silicon and compound semiconductorsbased on mechanical grinding (back-grinding) and polishing as well aschemical etching are now in commercial use. These processes allow devicewafer thickness to be reduced to less than 100 microns in a few minuteswhile maintaining precise control over cross-wafer thickness uniformity.

Device wafers that have been thinned to less than 100 microns, andespecially those thinned to less than 60 microns, are extremely fragileand must be supported over their full dimensions to prevent cracking andbreakage. Various wafer wands and chucks have been developed fortransferring ultra-thin device wafers, but the problem still exists ofhow to support the wafers during back-grinding and TSV-formationprocesses that include steps such as chemical-mechanical polishing(CMP), lithography, etching, deposition, annealing, and cleaning,because these steps impose high thermal and mechanical stresses on thedevice wafer as it is being thinned or after thinning. An increasinglypopular approach to ultra-thin wafer handling involves mounting thefull-thickness device wafer face down to a rigid carrier with apolymeric adhesive. It is then thinned and processed from the backside.The fully processed, ultra-thin wafer is then removed, or debonded, fromthe carrier by thermal, thermomechanical, or chemical processes afterthe backside processing has been completed.

Common carrier materials include silicon (e.g., a blank device wafer),soda lime glass, borosilicate glass, sapphire, and various metals andceramics. The carriers may be square or rectangular but are morecommonly round and are sized to match the device wafer so that thebonded assembly can be handled in conventional processing tools andcassettes. Sometimes the carriers are perforated to speed the debondingprocess when a liquid chemical agent is used to dissolve or decomposethe polymeric adhesive as the means for release.

The polymeric adhesives used for temporary wafer bonding are typicallyapplied by spin coating or spray coating from solution or laminating asdry-film tapes. Spin- and spray-applied adhesives are increasinglypreferred because they form coatings with higher thickness uniformitythan tapes can provide. Higher thickness uniformity translates intogreater control over cross-wafer thickness uniformity after thinning.The polymeric adhesives exhibit high bonding strength to the devicewafer and the carrier.

The polymeric adhesive may be spin-applied onto the device wafer, thecarrier, or both, depending on the thickness and coating planarity(flatness) that is required. The coated wafer is baked to remove all ofthe coating solvent from the polymeric adhesive layer. The coated waferand carrier are then placed in contact in a heated mechanical press forbonding. Sufficient temperature and pressure are applied to cause theadhesive to flow and fill into the device wafer structural features andachieve intimate contact with all areas of the device wafer and carriersurfaces.

Debonding of a device wafer from the carrier following backsideprocessing is typically performed in one of four ways:

(1) Chemical—The bonded wafer stack is immersed in, or sprayed with, asolvent or chemical agent to dissolve or decompose the polymericadhesive.

(2) Photo-Decomposition—The bonded wafer stack is irradiated with alight source through a transparent carrier to photo-decompose theadhesive boundary layer that is adjacent to the carrier. The carrier canthen be separated from the stack, and the balance of the polymericadhesive is peeled from the device wafer while it is held on a chuck.

(3) Thermo-Mechanical—The bonded wafer stack is heated above thesoftening temperature of the polymeric adhesive, and the device wafer isthen slid or pulled away from the carrier while being supported with afull-wafer holding chuck.

(4) Thermal Decomposition—The bonded wafer stack is heated above thedecomposition temperature of the polymeric adhesive, causing it tovolatilize and lose adhesion to the device wafer and carrier.

Each of these debonding methods has drawbacks that seriously limit itsuse in a production environment. For example, chemical debonding bydissolving the polymeric adhesive is a slow process because the solventmust diffuse over large distances through the viscous polymer medium toeffect release. That is, the solvent must diffuse from the edge of thebonded substrates, or from a perforation in the carrier, into the localregion of the adhesive. In either case, the minimum distance requiredfor solvent diffusion and penetration is at least 3-5 mm and can be muchmore, even with perforations to increase solvent contact with theadhesive layer. Treatment times of several hours, even at elevatedtemperatures (>60° C.), are usually required for debonding to occur,meaning wafer throughput will be low.

Photo-decomposition is likewise a slow process because the entire bondedsubstrate cannot be exposed at one time. Instead, the exposing lightsource, which is usually a laser having beam cross-section of only a fewmillimeters, must be focused on a small area at a time to deliversufficient energy for decomposition of the adhesive bond line to occur.The beam is then scanned (or rastered) across the substrate in a serialfashion to debond the entire surface, which leads to long debondingtimes.

While thermo-mechanical (TM) debonding can be performed typically in afew minutes, it has other limitations that can reduce device yield.Backside processes for temporarily bonded device wafers often involveworking temperatures higher than 200° C. or even 300° C. The polymericadhesives used for TM debonding must neither decompose nor softenexcessively at or near the working temperature, otherwise, debondingwould occur prematurely. As a result, the adhesives are normallydesigned to soften sufficiently at 20-50° C. above the workingtemperature for debonding to occur. The high temperature required fordebonding imposes significant stresses on the bonded pair as a result ofthermal expansion. At the same time, the high mechanical force requiredto move the device wafer away from the carrier by a sliding, lifting, ortwisting motion creates additional stress that can cause the devicewafer to break or produces damage within the microscopic circuitry ofindividual devices, which leads to device failure and yield loss.

Thermal decomposition (TD) debonding is also prone to wafer breakage.Gases are produced when the polymeric adhesive is decomposed, and thesegases can become trapped between the device wafer and the carrier beforethe bulk of the adhesive has been removed. The accumulation of trappedgases can cause the thin device wafer to blister and crack or evenrupture. Another problem with TD debonding is that polymer decompositionis often accompanied by the formation of intractable, carbonizedresidues that cannot be removed from the device wafer by common cleaningprocedures.

The limitations of these prior art methods have created the need for newmodes of carrier-assisted thin wafer handling that provide high waferthroughput and reduce or eliminate the chances for device wafer breakageand internal device damage.

SUMMARY OF THE INVENTION

The present invention overcomes the prior art problems by providing atemporary bonding method comprising providing a stack comprising:

a first substrate having a back surface and a device surface;

a first bonding layer adjacent the device surface and having a softeningtemperature;

a second bonding layer adjacent the first bonding layer and having asoftening temperature, wherein the softening temperature of the firstbonding layer is at least about 20° C. greater than the softeningtemperature of the second bonding layer; and

a second substrate having a carrier surface, the second bonding layerbeing adjacent the carrier surface. The first and second substrates arethen separated.

The invention also provides an article comprising a first substratehaving a back surface and a device surface. The article furthercomprises a first bonding layer adjacent the device surface and having asoftening temperature. There is a second bonding layer adjacent thefirst bonding layer and having a softening temperature, with thesoftening temperature of the first bonding layer being at least about20° C. greater than the softening temperature of the second bondinglayer. The article also includes a second substrate having a carriersurface, with the second bonding layer being adjacent the carriersurface.

In a further embodiment of the invention, a temporary bonding method isprovided. In the method, a stack is provided, and the stack comprises:

a first substrate having a back surface and a device surface;

a first rigid layer adjacent the device surface;

a bonding layer adjacent the first rigid layer; and

a second substrate having a carrier surface, the bonding layer beingadjacent the carrier surface. The stack further comprises one or both ofthe following:

a lift-off layer between the device surface and the first rigid layer;or

a second rigid layer between the bonding layer and the carrier surface.

The first and second substrates are then separated.

The invention also provides an article comprising a first substratehaving a back surface and a device surface. The article furthercomprises a first rigid layer adjacent the device surface, a bondinglayer adjacent the first rigid layer, and a second substrate having acarrier surface. The bonding layer is adjacent the carrier surface, andthe article further comprises one or both of the following:

a lift-off layer between the device surface and the first rigid layer;or

a second rigid layer between the bonding layer and the carrier surface.

In yet another embodiment of the invention, a temporary bonding methodis provided where the method comprises providing a stack comprising:

a first substrate having a back surface and a device surface, the devicesurface having a peripheral region and a central region;

a second substrate having a carrier surface;

an edge bond adjacent the peripheral region and the carrier surface; and

at least one layer selected from the group consisting of:

-   -   a lift-off layer between the edge bond and the device surface;    -   a lift-off layer between the edge bond and the carrier surface;    -   an adhesion promoter layer between the edge bond and the device        surface;    -   an adhesion promoter layer between the edge bond and the carrier        surface;    -   a bonding layer between said edge bond and said device surface;        and    -   a bonding layer between said edge bond and said carrier surface.        The first and second substrates are then separated.

In a final embodiment of the invention, an article is provided. Thearticle comprises a first substrate having a back surface and a devicesurface, and the device surface has a peripheral region and a centralregion. The article further comprises a second substrate having acarrier surface, an edge bond adjacent the peripheral region and thecarrier surface, and at least one layer selected from the groupconsisting of:

a lift-off layer between the edge bond and the device surface;

a lift-off layer between the edge bond and the carrier surface;

an adhesion promoter layer between the edge bond and the device surface;

an adhesion promoter layer between the edge bond and the carriersurface;

a bonding layer between said edge bond and said device surface; and

a bonding layer between said edge bond and said carrier surface.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a schematic drawing showing apreferred embodiment of the invention, as further exemplified inExamples 5-9;

FIG. 2 is a cross-sectional view of a schematic drawing illustrating howthicknesses are determined;

FIG. 3 is a cross-sectional view of a schematic drawing depictinganother embodiment of the invention, as further exemplified in Examples10-16;

FIG. 4 is a cross-sectional view of a schematic drawing showing analternative embodiment of the invention, as further exemplified inExample 17;

FIG. 5 is a cross-sectional view of a schematic drawing illustrating avariation of the embodiment of the invention that is shown in FIG. 4;

FIG. 6 is a cross-sectional view of a schematic drawing showing analternative embodiment of the invention;

FIG. 7 is a cross-sectional view of a schematic drawing depicting avariation of the embodiment that is shown in FIG. 6;

FIG. 8 is a cross-sectional view of a schematic drawing showing analternative embodiment of the invention; and

FIG. 9 is a cross-sectional view of a schematic drawing depicting avariation of the embodiment that is shown in FIG. 6, with this variationbeing similar to the process that is exemplified in Example 18.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In more detail, the present invention provides methods of formingmicroelectronic structures using multilayer bonding schemes. While thedrawings illustrate, and the specification describes, certain preferredembodiments of the invention, it is to be understood that suchdisclosure is by way of example only. Embodiments of the presentinvention are described herein with reference to cross-sectionillustrations that are schematic illustrations of idealized embodimentsof the present invention. As such, variations from the shapes of theillustrations as a result, for example, of manufacturing techniquesand/or tolerances, are to be expected. There is no intent to limit theprinciples of the present invention to the particular disclosedembodiments. For example, in the drawings, the size and relative sizesof layers and regions may be exaggerated for clarity. In addition,embodiments of the present invention should not be construed as limitedto the particular shapes of regions illustrated herein but are toinclude deviations in shapes that result, for example, frommanufacturing. For example, a region illustrated as a rectangle may haverounded or curved features. Thus, the regions illustrated in the figuresare schematic in nature and their shapes are not intended to illustratethe precise shape of a region of a device or of topography and are notintended to limit the scope of the present invention.

1. Bilayer Bonding Scheme I

Referring to FIG. 1( a), a precursor structure 10 is depicted in aschematic and cross-sectional view. Structure 10 includes a firstsubstrate 12. Substrate 12 has a front or device surface 14, a backsurface 16, and an outermost edge 18. Although substrate 12 can be ofany shape, it would typically be circular in shape. Preferred firstsubstrates 12 include device wafers such as those whose device surfacescomprise arrays of devices (not shown) selected from the groupconsisting of integrated circuits, MEMS, microsensors, powersemiconductors, light-emitting diodes, photonic circuits, interposers,embedded passive devices, and other microdevices fabricated on or fromsilicon and other semiconducting materials such as silicon-germanium,gallium arsenide, and gallium nitride. The surfaces of these devicescommonly comprise structures (again, not shown) formed from one or moreof the following materials: silicon, polysilicon, silicon dioxide,silicon (oxy)nitride, metals (e.g., copper, aluminum, gold, tungsten,tantalum), low k dielectrics, polymer dielectrics, and various metalnitrides and silicides. The device surface 14 can also include at leastone structure selected from the group consisting of: solder bumps; metalposts; metal pillars; and structures formed from a material selectedfrom the group consisting of silicon, polysilicon, silicon dioxide,silicon (oxy)nitride, metal, low k dielectrics, polymer dielectrics,metal nitrides, and metal silicides.

A composition is applied to the first substrate 12 to form a firstbonding layer 20 on the device surface 14, as shown in FIG. 1( a).Bonding layer 20 has an upper surface 21 remote from first substrate 12,and preferably, the first bonding layer 20 is formed directly adjacentthe device surface 14 (i.e., without any intermediate layers between thefirst bonding layer 20 and substrate 12). The composition can be appliedby any known application method, with one preferred method beingspin-coating the composition at speeds of from about 500 rpm to about5,000 rpm (preferably from about 500 rpm to about 2,000 rpm) for a timeperiod of from about 5 seconds to about 120 seconds (preferably fromabout 30 seconds to about 90 seconds). After the composition is applied,it is preferably heated to a temperature of from about 80° C. to about250° C., and more preferably from about 170° C. to about 220° C. and fortime periods of from about 60 seconds to about 8 minutes (preferablyfrom about 90 seconds to about 6 minutes). Depending upon thecomposition used to form the first bonding layer 20, baking can alsoinitiate a crosslinking reaction to cure the layer 20. In someembodiments, it is preferable to subject the layer to a multi-stage bakeprocess, depending upon the composition utilized. Also, in someinstances, the above application and bake process can be repeated on afurther aliquot of the composition, so that the first bonding layer 20is “built” on the first substrate 12 in multiple steps.

A second precursor structure 22 is also depicted in a schematic andcross-sectional view in FIG. 1( a). Second precursor structure 22includes a second substrate 24. In this embodiment, second substrate 24is a carrier wafer. That is, second substrate 24 has a front or carriersurface 26, a back surface 28, and an outermost edge 30. Although secondsubstrate 24 can be of any shape, it would typically be circular inshape and sized similarly to first substrate 12. Preferred secondsubstrates 24 include silicon, sapphire, quartz, metals (e.g., aluminum,copper, steel), and various glasses and ceramics.

A second composition is applied to the second substrate 24 to form asecond bonding layer 32 on the carrier surface 26, as shown in FIG. 1(a). Second bonding layer 32 has an upper surface 33 remote from secondsubstrate 24, and a lower surface 35 adjacent second substrate 24.Preferably, the second bonding layer 32 is formed directly adjacent thecarrier surface 26 (i.e., without any intermediate layers between thesecond bonding layer 32 and second substrate 24). The composition can beapplied by any known application method, with one preferred method beingspin-coating the composition at speeds of from about 500 rpm to about5,000 rpm (preferably from about 500 rpm to about 2,000 rpm) for a timeperiod of from about 5 seconds to about 120 seconds (preferably fromabout 30 seconds to about 90 seconds). After the composition is applied,it is preferably heated to a temperature of from about 80° C. to about250° C., and more preferably from about 170° C. to about 220° C. and fortime periods of from about 60 seconds to about 8 minutes (preferablyfrom about 90 seconds to about 6 minutes). Depending upon thecomposition used to form the second bonding layer 32, baking can alsoinitiate a crosslinking reaction to cure the layer 32. In someembodiments, it is preferable to subject the layer to a multi-stage bakeprocess, depending upon the composition utilized.

The thickness of first and second bonding layers 20 and 32 (as well asother layers as described herein) can best be illustrated by referenceto FIG. 2, where like numbering has been used to represent like parts.Device surface 14 has been drawn in FIG. 2 to schematically depict thevariation in topography on device surface 14 due to the presence of theabove-described devices as well as of raised features, contact holes,via holes, lines, trenches, etc., that are present on or in devicesurface 14. Among the various features found on device surface 14 arehighest feature 36 and lowest feature 38. (As used herein, “highest”refers to the feature extending the farthest from back surface 16 offirst substrate 12, while “lowest” refers to the feature whose lowestpoint is closest to back surface 16 of first substrate 12.) Highestfeature 36 has an uppermost surface 36 a, while lowest feature 38 has alowermost surface or point 38 a. When referring to the thickness of alayer that has been applied to a topographical (i.e., non-planar)surface, two thicknesses may be references. T₁ refers to the distancefrom a lower plane 40 defined by lowermost surface or point 38 a andextending to upper surface 21, as exemplified in FIG. 2. T₂ refers tothe layer's thickness as measured above the uppermost surface 36 a.Specifically, and as shown in FIG. 2, this thickness T₂ begins at upperplane 42 and extends to the upper surface 21. When referring to thethickness of a layer that has been applied to a planar (or substantiallyplanar) surface, that thickness is represented by T₃ in FIG. 2, and isthe distance between lower surface 35 and upper surface 33 of layer 32.Finally, in some instances, thickness T₄ is used, and it refers to thedistance from lower plane 40 to upper plane 42. All thicknesses refer toaverage thicknesses taken over five measurements.

In the embodiment of this invention, first bonding layer 20 preferablyhas a thickness T₁ that is at least equal to T₄, preferably from about1.1T₄ to about 1.5T₄, and more preferably from about 1.2T₄ to about1.3T₄. This will typically result in a thickness T₁ of at least about 24μm, more preferably from about 45 μm to about 200 μm, and even morepreferably from about 50 μm to about 150 μm. Furthermore, first bondinglayer 20 preferably has a thickness T₂ of at least about 5 μm, morepreferably from about 5 μm to about 50 μm, and even more preferably fromabout 10 μm to about 30 μm. Second bonding layer 32 has a thickness T₃of less than about 35 μm, preferably from about 1 μm to about 35 μm,more preferably from about 1 μm to about 25 μm, and even more preferablyfrom about 1 μm to about 15 μm.

First bonding layer 20 preferably has a softening point (ring and ball)that is at least about 20° C. higher than the softening point of secondbonding layer 32, more preferably from about 20° C. to about 200° C.higher, and even more preferably from about 20° C. to about 100° C.higher. This will typically result in first bonding layer 20 having asoftening point that is at least about 100° C., preferably from about150° C. to about 400° C., and more preferably from about 200° C. toabout 300° C. Furthermore, typical softening points of second bondinglayer 32 will be less than about 220° C., preferably from about 50° C.to about 220° C., and more preferably from about 100° C. to about 150°C.

The materials from which first and second bonding layers 20 and 32 areformed should be capable of forming a strong adhesive bond with thefirst and second substrates 12 and 24, respectively, as well as with oneanother. Anything with an adhesion strength of greater than about 50psig, preferably from about 80 psig to about 250 psig, and morepreferably from about 100 psig to about 150 psig as determined by ASTMD4541/D7234, would be desirable for use as first and second bondinglayers 20 and 32.

Advantageously, the compositions for use in forming first and secondbonding layers 20 and 32 can be selected from commercially availablebonding compositions that would be capable of being formed into layerspossessing the above properties. Typical such compositions are organicand will comprise a polymer or oligomer dissolved or dispersed in asolvent system. The polymer or oligomer is typically selected from thegroup consisting of polymers and oligomers of cyclic olefins, epoxies,acrylics, silicones, styrenics, vinyl halides, vinyl esters, polyamides,polyimides, polysulfones, polyethersulfones, cyclic olefins, polyolefinrubbers, and polyurethanes, ethylene-propylene rubbers, polyamideesters, polyimide esters, polyacetals, and polyvinyl butyral. Typicalsolvent systems will depend upon the polymer or oligomer selection.Typical solids contents of the compositions will range from about 1% toabout 60% by weight, and preferably from about 3% to about 40% byweight, based upon the total weight of the composition taken as 100% byweight. Some suitable compositions are described in U.S. PatentPublication Nos. 2007/0185310, 2008/0173970, 2009/0038750, and2010/0112305, each incorporated by reference herein.

Structures 10 and 22 are then pressed together in a face-to-facerelationship, so that upper surface 21 of first bonding layer 20 is incontact with upper surface 33 of second bonding layer 32 (FIG. 1( b)).While pressing, sufficient pressure and heat are applied for asufficient amount of time so as to effect bonding of the two structures10 and 22 together to form bonded stack 34. The bonding parameters willvary depending upon the compositions from which bonding layers 20 and 32are formed, but typical temperatures during this step will range fromabout 150° C. to about 375° C., and preferably from about 160° C. toabout 350° C., with typical pressures ranging from about 1,000 N toabout 5,000 N, and preferably from about 2,000 N to about 4,000 N, for atime period of from about 30 seconds to about 5 minutes, and morepreferably from about 2 minutes to about 4 minutes.

At this stage, the first substrate 12 can be safely handled andsubjected to further processes that might otherwise have damaged firstsubstrate 12 without being bonded to second substrate 24. Thus, thestructure can safely be subjected to backside processing such asback-grinding, CMP, etching, metal and dielectric deposition, patterning(e.g., photolithography, via etching), passivation, annealing, andcombinations thereof, without separation of substrates 12 and 24occurring, and without infiltration of any chemistries encounteredduring these subsequent processing steps. Not only can first bondinglayer 20 and second bonding layer 32 survive these processes, they canalso survive processing temperatures up to about 450° C., preferablyfrom about 200° C. to about 400° C., and more preferably from about 200°C. to about 350° C.

Once processing is complete, the substrates 12 and 24 can be separatedby any number of separation methods (not shown). One method involvesdissolving one or both of the first and second bonding layers 20, 32 ina solvent (e.g., limonene, dodecene, propylene glycol monomethyl ether(PGME)). Alternatively, substrates 12 and 24 can also be separated byfirst mechanically disrupting or destroying the periphery of one or bothof first and second bonding layers 20, 32 using laser ablation, plasmaetching, water jetting, or other high energy techniques that effectivelyetch or decompose first and second bonding layers 20, 32. It is alsosuitable to first saw or cut through the first and second bonding layers20, 32 or cleave the layers 20, 32 by some equivalent means. Regardlessof which of the above means is utilized, a low mechanical force (e.g.,finger pressure, gentle wedging) can then be applied to completelyseparate the substrates 12 and 24.

The most preferred separation method involves heating the bonded stack34 to temperatures of at least about 100° C., preferably from about 150°C. to about 220° C., and more preferably from about 180° C. to about200° C. It will be appreciated that at these temperatures, secondbonding layer 32 will soften, allowing the substrates 12 and 24 to beseparated (e.g., by a slide debonding method, such as that described inU.S. Patent Publication No. 2008/0200011, incorporated by referenceherein). After separation, any remaining first or second bonding layer20 and 32 can be removed with a solvent capable of dissolving theparticular layer 20 or 32. In some embodiments, the composition forforming first bonding layer 20 will be selected so that it is suitableleave some or all of it on the first substrate 12 permanently. In theseinstances, first bonding layer 20 will serve some function (e.g., gapfill) in subsequent wafer processing steps, an advantage missing fromprior art processes.

It will be appreciated that this bilayer embodiment provides a number ofadvantages. The bonding temperatures and overall thermal stability ofthe structure can be controlled due to the inventive methods. That is,the inventive method allows the use of higher processing temperatureswhile simultaneously making bonding and debonding possible at lowertemperatures.

2. Bilayer Bonding Scheme II

The second bilayer bonding scheme is shown in FIG. 3, with like numbersrepresenting like parts. In this embodiment, a “cleaning” or lift-offlayer 44 having an upper surface 46 and lower surface 48 is formed ondevice surface 14. Lift-off layer 44 can be formed by any knownapplication method, with one preferred method being spin-coating thecomposition used to form layer 44 at speeds of from about 500 rpm toabout 5,000 rpm (preferably from about 500 rpm to about 2,000 rpm) for atime period of from about 5 seconds to about 120 seconds (preferablyfrom about 30 seconds to about 90 seconds). After the composition isapplied, it is preferably heated to a temperature of from about 60° C.to about 250° C., and more preferably from about 80° C. to about 220° C.and for time periods of from about 60 seconds to about 4 minutes(preferably from about 90 seconds to about 2 minutes). In someembodiments, it is preferable to subject the layer to a multi-stage bakeprocess, depending upon the composition utilized. Depending upon thecomposition used to form the lift-off layer 44, baking can also initiatea crosslinking reaction to cure the layer 44.

Lift-off layer 44 preferably has a thickness T₁ of less than about 3 μm,more preferably from about 0.5 μm to about 3 μm, and even morepreferably from about 1 μm to about 1.5 μm. In other embodiments,lift-off layer 44 is a conformal layer, so it would not have the abovethickness.

The compositions used to form lift-off layer 44 should be selected sothat layer 44 is soluble in solutions selected from the group consistingof 1% hydrochloric acid aqueous solution, 50% acetic acid aqueoussolution, isopropanol, 1-dodecene, R-limonene, cyclopentanone, PGME, andtetramethylammonium hydroxide (TMAH). More specifically, lift-off layer44 will be at least about 95%, preferably at least about 99%, andpreferably 100% dissolved/removed after about 4-5 hours of contact withthe particular remover solution.

Preferred compositions for forming lift-off layer 44 can be selectedfrom commercially available compositions possessing the aboveproperties. Examples of such compositions include those selected fromthe group consisting of poly(vinyl pyridine) and polyamic acids. Twopreferred such compositions are ProLIFT® and the WGF series ofwet-developable materials (available from Brewer Science, Inc.). Aparticularly preferred composition for use is described in U.S. PatentPublication No. 2009/0035590, incorporated by reference herein.

Next, a bonding layer 20 is formed on lift-off layer 44 (FIG. 3( b)).Bonding layer 20 preferably has a thickness T₁ as described with respectto FIG. 1, and a thickness T₂ of at least about 5 μm, more preferablyfrom about 5 μm to about 50 μm, and even more preferably from about 10μm to about 30 μm. A second substrate 24 is then bonded to bonding layer20 (FIG. 3( c)), as described previously, to form a bonded stack 50. Thebonded stack 50 can then be subjected to further processing as describedabove.

Once the first and second substrates 12 and 24 are ready to beseparated, the bonded stack 50 is exposed to one of the above removersolutions (preferably for time periods of from about 1 minute to about 5hours, and more preferably from about 2 minutes to about 60 minutes), sothat the solution will dissolve lift-off layer 44, thus allowing thesubstrates 12 and 24 to be separated. Advantageously, in embodimentswhere lift-off layer 44 is functioning as a “cleaning” layer, thesubstrates 12 and 24 can be separated by heating to soften bonding layer20 sufficiently to allow substrates 12 and 24 to be separated. Once thesubstrates 12 and 24 have been separated, lift-off/cleaning layer 44 canbe removed with a remover solution, and this will simultaneously causeany remaining residue of bonding layer 20 to also be removed.

3. Trilayer Bonding Scheme I

The first trilayer bonding scheme is shown in FIG. 4, with like numbersrepresenting like parts. The embodiment shown in FIG. 4 is similar tothat shown in FIG. 3, except that first bonding layer 20 of FIG. 3 hasbeen changed to second bonding layer 32 and an additional layer is addedbetween “cleaning” or lift-off layer 44 and second bonding layer 32.Specifically, after the lift-off layer 44 has been formed on devicesurface 14 (as described previously, and see FIG. 4( a)), a rigid layer52 having an upper surface 54 and a lower surface 56 is formed on uppersurface 46 of lift-off layer 44 (FIG. 4( b)). As used herein, “rigid”refers to a layer that has a high shear modulus of at least 1 GPa, asdetermined by a rheometer. Furthermore, “rigid” refers to layers that donot flow at process temperatures (typically from about 150° C. to about400° C., and preferably from about 200° C. to about 300° C.).

The compositions used to form rigid layer 52 would be the same types ofcompositions discussed above with respect to first bonding layer 20.Furthermore, rigid layer 52 would be formed in a manner similar to thatdescribed above with respect to first bonding layer 20 (includingsimilar thicknesses, as described with respect to FIG. 1, if lift-offlayer 44 is conformal in nature). Rigid layer 52 preferably has athickness T₃ (if lift-off layer 44 is not conformal in nature) of fromabout 1 μm to about 35 μm, more preferably from about 1 μm to about 25μm, and even more preferably from about 1 μm to about 15 μm.

Referring to FIG. 4( c), second bonding layer 32 is formed on uppersurface 54 of rigid layer 52, using the same application methods andtypes of compositions described previously. In this embodiment, thethickness T₃ of second bonding layer 32 is from about 1 μm to about 35μm, more preferably from about 1 μm to about 25 μm, and even morepreferably from about 1 μm to about 15 μm.

Rigid layer 52 preferably has a softening point that is at least about20° C. higher than the softening point of second bonding layer 32, morepreferably from about 20° C. to about 300° C. higher, and even morepreferably from about 20° C. to about 100° C. higher. This willtypically result in rigid layer 52 having a softening point that is atleast about 100° C., preferably from about 150° C. to about 400° C., andmore preferably from about 200° C. to about 300° C.

Second substrate 24 is bonded to bonding layer 32, as describedpreviously, to form a bonded stack 58 (FIG. 4( d)). The bonded stack 58can then be subjected to further processing as described above. Once thefirst and second substrates 12 and 24 are ready to be separated, thebonded stack 58 is exposed to one of the previously-described removersolutions, so that the solution will dissolve lift-off layer 44, thusallowing the substrates 12 and 24 to be separated. Alternatively,separation can be effected by heating stack 58 so as to soften bondinglayer 32, as described previously. In this latter instance, lift-offlayer 44 is again functioning as a cleaning layer, and bonding layerresidue can be removed by removing layer 44 with a remover solution.

4. Trilayer Bonding Scheme II

Another trilayer bonding scheme is shown in FIGS. 5( a)-5(d), with likenumbers representing like parts. This embodiment is a variation on theabove embodiments in that the multilayer bonding system includes tworigid layers 52, with a layer of second bonding layer 32 between the twolayers 52. Composition selection, processing parameters and steps, etc.,are the same as described above for the corresponding layer. Althoughnot shown, this embodiment could be modified by reversing the bondinglayer 32 with one of the rigid layers 52 (and preferably the rigid layer52 closest to second substrate 24).

5. Multiple Layers at Substrate Edge

Further embodiments of the present invention are illustrated in FIGS. 6and 7, with like parts being numbered in a like manner. For theseembodiments, reference is made to U.S. Patent Publication No.2009/0218560, incorporated by reference herein.

Referring to FIG. 6( a), in this embodiment, structure 55 is depicted.The device surface 14 of first substrate 12 includes a peripheral region57, a central region 59, and a bilayer bonding system 60 at theperipheral region 57. System 60 includes thin layer 62, which has anupper surface 64 and a lower surface 66 as well as a bonding segment 68,which includes exterior surface 70, interior surface 72, lower surface74, and bonding surface 76. Lower surface 66 of thin layer 62 isadjacent device surface 14 of first substrate 12 at peripheral region57, while lower surface 74 of bonding segment 68 is adjacent thin layer62.

Thin layer 62 can be a lift-off layer similar to that described abovewith respect to lift-off layer 44, or thin layer 62 can be an adhesionpromoter layer. In instances where it is an adhesion promoter layer, anycommercially available adhesion promoter composition can be used forthis purpose. Some examples of such compositions include organo silanes(e.g., ProTEK® primer, available from Brewer Science, Inc.).

Thin layer 62 can be formed by conventional methods, such asspin-coating, followed by baking at temperatures suitable for theparticular composition. For example, the methods followed to formlift-off layer 44 as described above could be used to form thin layer62. Additionally, although FIG. 6( a) depicts this layer as only beingpresent at peripheral region 57, thin layer 62 could also extendentirely across device surface 14, so that it is also present in centralregion 59. The thin layer 62 preferably has a thickness T₃ at peripheralregion 57 of from about 1 μm to about 35 μm, more preferably from about1 μm to about 25 μm, and even more preferably from about 1 μm to about15 μm. In instances where thin layer 62 extends across the entire devicesurface 14, it will have a thickness T₁ of from about 0.1 μm to about 20μm, preferably from about 0.25 μm to about 10 μm, and more preferablyfrom about 1 μm to about 3 μm. In other instances, thin layer 62 couldbe a conformal layer, and thus would not have the above thicknesses.

Bonding segment 68 can be formed from any commercially available bondingcomposition, including those discussed above with respect to first andsecond bonding layers 20 and 32. Bonding segment 68 will typically havea width “D” of from about 2 mm to about 15 mm, preferably from about 2mm to about 10 mm, and more preferably from about 2 mm to about 5 mm.Furthermore, bonding segment 68 preferably has a thickness T₃ of fromabout 5 μm to about 100 μm, more preferably from about 5 μm to about 50μm, and even more preferably from about 10 μm to about 30 μm.

At this point, structure 55 could be bonded to a second substrate 24, asdescribed with previous embodiments, or a fill layer 78 can be formed atcentral region 59 of device surface 14, as shown in FIG. 6( b). Filllayer 78 would have the same thicknesses as those described above withrespect to bonding segment 68. Fill layer 78 is typically formed of amaterial comprising monomers, oligomers, and/or polymers dispersed ordissolved in a solvent system. If the fill layer 78 will be applied viaspin-coating, it is preferred that the solids content of this materialbe from about 1% by weight to about 50% by weight, more preferably fromabout 5% by weight to about 40% by weight, and even more preferably fromabout 10% by weight to about 30% by weight. Examples of suitablemonomers, oligomers, and/or polymers include those selected from thegroup consisting of cyclic olefin polymers and copolymers and amorphousfluoropolymers with high atomic fluorine content (greater than about 30%by weight) such as fluorinated siloxane polymers, fluorinatedethylene-propylene copolymers, polymers with pendant perfluoroalkoxygroups, and copolymers of tetrafluoroethylene and2,2-bis-trifluoromethyl-4,5-difluoro-1,3-dioxole being particularpreferred. It will be appreciated that the bonding strength of thesematerials will depend upon their specific chemical structures and thecoating and baking conditions used to apply them.

In this embodiment, the fill layer 78 preferably does not form strongadhesive bonds, thus facilitating separation later. Generally speaking,amorphous polymeric materials that: (1) have low surface free energies;(2) are tack-free and known to not bond strongly to glass, silicon, andmetal surfaces (i.e., would typically have very low concentrations ofhydroxyl or carboxylic acid groups, and preferably no such groups); (3)can be cast from solution or formed into a thin film for lamination; (4)will flow under typical bonding conditions to fill device wafer surfacetopography, forming a void-free bond line between substrates; and (5)will not crack, flow, or redistribute under mechanical stressesencountered during backside processing, even when carried out at hightemperatures or under high vacuum conditions, are desirable. As usedherein, low surface free energy is defined as a polymeric material thatexhibits a contact angle with water of at least about 90° and a criticalsurface tension of less than about 40 dynes/cm, preferably less thanabout 30 dynes/cm, and more preferably from about 12 dynes/cm to about25 dynes/cm, as determined by contact angle measurements.

Low bonding strength refers to polymeric materials that do not stick orcan be peeled from a substrate with only light hand pressure such asmight be used to debond an adhesive note paper. Thus, anything with anadhesion strength of less than about 50 psig, preferably from less thanabout 35 psig, and more preferably from about 1 psig to about 30 psigwould be desirable for use as fill layer 22. Examples of suitablepolymeric materials exhibiting the above properties include some cyclicolefin polymers and copolymers sold under the APEL® by Mitsui, TOPAS® byTicona, and ZEONOR® by Zeon brands, and solvent-soluble fluoropolymerssuch as CYTOP® polymers sold by Asahi Glass and TEFLON® AF polymers soldby DuPont. The bonding strength of these materials will depend upon thecoating and baking conditions used to apply them.

At this point, a second substrate can be bonded to the structure 55using the steps described with previous embodiments to form bonded stack82 as shown in FIG. 6( c). After the desired processing is completed onstack 82, first substrate 12 and second substrate 24 can be readilyseparated. In one separation method, the bonding segment 68 is firstdissolved with the aid of a solvent or other chemical agent. This can beaccomplished by immersion in the solvent, or by spraying a jet of thesolvent onto bonding segment 68 in order to dissolve it. The use ofthermoplastic materials is especially desirable if solvent dissolutionis to be used to disrupt the bonding segment 68. Solvents that couldtypically be used during this removal process include those selectedfrom the group consisting of ethyl lactate, cyclohexanone, -methylpyrrolidone, aliphatic solvents (e.g., hexane, decane, dodecane, anddodecene), and mixtures thereof.

The substrates 12 and 24 can also be separated by first mechanicallydisrupting or destroying the continuity of the bonding segment 68 usinglaser ablation, plasma etching, water jetting, or other high energytechniques that effectively etch or decompose the bonding segment 68. Itis also suitable to first saw or cut through the bonding segment 68 orcleave the bonding segment 68 by some equivalent means.

Regardless of which of the above means is utilized, a low mechanicalforce (e.g., finger pressure, gentle wedging) can then be applied tocompletely separate the substrates 12 and 24. Advantageously, separationdoes not require having to overcome strong adhesive bonds between thefill layer 78 and the substrates 12 or 24. Instead, it is only necessaryto release the adhesive bonds at bonding segment 68 in the peripheralregion 57 for separation to occur. The surfaces of the substrates 12and/or 24 can then be rinsed clean with appropriate solvents asnecessary to remove any residual material.

With respect to the above embodiment, it should be noted that theformation of bonding segment 68 before the formation of fill layer 78 isonly one possible order of formation. It is also possible to form thefill layer 78 first, followed by formation of bonding system 60 orbonding segment 68. Order of formation is not critical to the inventionand can be varied by one of ordinary skill in the art.

Referring to FIG. 7, a further embodiment of the invention is shown,with like numbering representing like parts. This embodiment is similarto FIG. 6, except that the first and second substrates 12 and 24 havebeen switched. That is, the thin layer 62 is in contact with carriersurface 26 of second substrate 24 rather than device surface 14 of firstsubstrate 12, and the bonding surface 76 of bonding segment 68 is bondedto device surface 14 of first substrate 12. Thus, thin layer 62 can beadjacent lower surface 74 or bonding surface 76 of bonding segment 68,or both, depending upon the needs of the particular application. In thisembodiment, thin layer 62 will have the thickness T₃ described withrespect to the FIG. 6 embodiment, and these thicknesses will hold trueacross the entire thin layer 62.

6. Multiple Layers with Zone Region at Substrate Edge

FIG. 8 depicts a further embodiment of this invention, with like numbersrepresenting like parts. Referring to FIG. 8( a), a second bonding layer32 is formed at only the peripheral region 57 of first substrate 12.Application methods, desired properties (including softening point), andpossible compositions for use as second bonding layer 32 are asdescribed previously. Referring to FIG. 8( b), a fill layer 78 is formedin central region 59 of device surface 14, as described with respect toFIGS. 6 and 7 above.

Next, and as shown in FIG. 8( c), a first bonding layer 20 is formed onupper surface 33 of second bonding layer 32 and on upper surface 80 offill layer 78 to form a structure 84. Again, application methods,desired properties, and possible compositions for use as first bondinglayer 20 are as described previously. Second substrate 24 can be bondedto the structure 84 using the steps described with previous embodimentsto form bonded stack 86 as shown in FIG. 8( d). (Alternatively, asdescribed in Example 18, first bonding layer 20 could instead be formedon carrier surface 21 of second substrate 24, and then the twostructures could be pressed together to form bonded stack 86, similar tothe order of steps shown in FIG. 1.)

The bonded stack 86 can then be subjected to further processing asdescribed above. Once the first and second substrates 12 and 24 areready to be separated, the bonded stack 86 is exposed to a removersolution (e.g., limonene, dodecene, PGME), so that the solution willdissolve second bonding layer 32, thus allowing the substrates 12 and 24to be separated. Alternatively, separation can be effected by heatingstack 86 so as to soften second bonding layer 32, which has a lowersoftening point than first bonding layer 20, so that the substrates 12and 24 can be separated, as described previously.

Referring to FIG. 9, a further embodiment of the invention is shown,with like numbering representing like parts. This embodiment is similarto that of FIG. 8, except that the first and second substrates 12 and 24have been switched. That is, the second bonding layer 32 and fill layer78 are in contact with carrier surface 26 of second substrate 24 ratherthan device surface 14 of first substrate 12, and the first bondinglayer 20 is bonded to device surface 14 of first substrate 12. Thus, thelocation of second bonding layer 32 and fill layer 78 can be adjusted,depending upon the needs of the particular application.

For each of the above bonding schemes where the various bonding,lift-off, and rigid layers have been shown to substantially and evencompletely cover the particular substrate surface, it will beappreciated that one or more of these layers could be modified to spanonly part of the particular substrate (even if not shown). In otherwords, only a portion of the particular substrate surface would be incontact with that particular layer, and this would still be in the scopeof the present invention.

Furthermore, even in instances where layers have been shown to be formedone on top of another on a first substrate (device) followed by bondingwith a second substrate (carrier), all layers could instead be formedone on top of another on the second substrate and then bonded with thefirst substrate. Or, one or more layers could be formed on the firstsubstrate while other layers are formed on the second substrate, andthen the two substrates are bonded together. Order is not critical, solong as the resulting structure has the layer systems shown and/ordescribed herein.

EXAMPLES

The following examples set forth preferred methods in accordance withthe invention. It is to be understood, however, that these examples areprovided by way of illustration and nothing therein should be taken as alimitation upon the overall scope of the invention.

Examples 1 through 9 illustrate the invention's improved bondingperformance. Examples 10 through 16 illustrate the improved ability ofthe bonding compositions to be cleaned after debonding.

Example 1 Composition of Cyclic Olefin Copolymer (COC) BondingComposition A

In this formulation, 250 grams of an ethene-norbornene copolymer (APL8008T, obtained from Mitsui Chemicals America, Inc., Rye Brook, N.Y.)and 3.125 grams of a phenolic antioxidant (IRGANOX 1010, obtained fromBASF, Germany) were dissolved in 373.45 grams of R-limonene (obtainedfrom Florida Chemical Co., Winter Haven, Fla.) and 373.45 grams ofcyclooctane (obtained from Sigma-Aldrich, Inc., St. Louis, Mo.). Themixture was allowed to stir at room temperature until all of thecomponents dissolved. The final solution had 25.31% solids.

Example 2 Composition of COC Bonding Composition B

In this formulation, 210.31 grams of an ethane-norbornene copolymer(Topas 8007, obtained from Topas Advanced Polymers, Florence, Ky.) and62.4 grams of a low-molecular-weight COC polymer (Topas TM, obtainedfrom Topas Advanced Polymers, Florence, Ky.) were dissolved in 706 gramsof R-limonene along with 4.0 grams of a phenolic antioxidant (Irganox1010) and 14.5 grams of polyisobutylene (obtained from ScientificPolymer Products, Inc., Ontario, N.Y.) with a molecular weight of 2,800Daltons. The mixture was allowed to stir at room temperature until allof ingredients were in solution. The solution had 29% solids.

Example 3 Composition of COC Bonding Composition C

In this formulation, 50 grams of COC Bonding Composition B from Example2 were mixed with 50 grams of R-limonene. The mixture was allowed tostir at room temperature to form a solution. The solution had 14.5%solids.

Example 4 Composition of Bonding Composition D

In this formulation, 120 grams of WaferBOND® HT-10.10 material (obtainedfrom Brewer Science, Inc.) were mixed with 80 grams of 1-dodecene(Sigma-Aldrich, St. Louis, Mo.). The mixture was allowed to stir at roomtemperature to form a solution.

Example 5 Thick COC Bonding Composition a Layer on Device Wafer and ThinCOC Bonding Composition C Layer on Carrier Wafer

In this procedure, 10 mL of the COC Bonding Composition A from Example1, which was a cyclic olefin polymer coating layer designed to flowsufficiently at 270° C. to achieve effective bonding between the coatedsubstrate and a second substrate, were spin-coated on a 200-mm siliconwafer and baked (using the spin and bake parameters described below) toform a film of COC Bonding Composition A. This process was exactlyrepeated with a second aliquot of 10 mL of the COC Bonding Composition Afrom Example 1, with this second aliquot being used to form a film ontop of the first film. The final film thickness after both applicationsteps was 96 μm.

COC Bonding Composition C from Example 3, which was a cyclic olefinpolymer coating layer designed to flow sufficiently at 220° C. toachieve effective bonding between the coated substrate and a secondsubstrate, was spin-coated on another 200-mm silicon wafer. Thethickness of COC Bonding Composition C was about 3 μm. The spin-coatingand baking parameters were the same for COC Bonding Composition A andCOC Bonding Composition C and were as follows.

-   -   Spin-coating conditions: 800 rpm spin-coat for 60 seconds, with        10,000 rpm/see acceleration.    -   Baking conditions, in order: 80° C. for 2 minutes, 110° C. for 2        minutes, 160° C. for 2 minutes, and 220° C. for 6 minutes.

The two silicon wafers coated with COC Bonding Composition A and COCBonding Composition C as described above were bonded in a face-to-facerelationship under vacuum at 220° C. for 3 minutes in a heated vacuum ina pressure chamber with 5,800 N of bonding pressure. A debonder thatuses a sliding process similar to that described in U.S. PatentPublication No. 2010/0206479, incorporated by reference (obtained fromBrewer Science, Inc., Rolla, Mo.) then separated the bonded wafers at220° C.

Example 6 Thick COC Bonding Composition A and Thin COC BondingComposition C

In this procedure, 10 mL of the COC Bonding Composition A from Example1, which was a cyclic olefin polymer coating layer designed to flowsufficiently at 270° C. to achieve effective bonding between the coatedsubstrate and a second substrate, were spin-coated on a 200-mm siliconwafer and baked (using the spin and bake parameters described below) toform a film of COC Bonding Composition A. This process was exactlyrepeated with a second aliquot of 10 mL of the COC Bonding Composition Afrom Example 1, with this second aliquot being used to form a film ontop of the first film. The final film thickness after both applicationsteps was 93 μm.

COC Bonding Composition C from Example 3, a cyclic olefin polymercoating layer designed to flow sufficiently at 220° C. to achieveeffective bonding between the coated substrate and a second substrate,was spin-coated on top of the COC Bonding Composition A film. Thethickness of the COC Bonding Composition C film was 8 μm. Thespin-coating and baking parameters were the same for COC BondingComposition A and COC Bonding Composition C and were as follows:

-   -   Spin-coating conditions: 800 rpm spin-coat for 60 seconds, with        10,000 rpm/second acceleration.    -   Baking conditions, in order: 110° C. for 4 minutes, 160° C. for        2 minutes, and 220° C. for 6 minutes.

The center of another 200-mm silicon wafer was coated with fluorinatedsilane (heptadeccafluoro-1,1,2,2-tetrahydrodecyl trichlorosilane), whilea 3-mm region along the outer edge of the wafer was left without thefluorinated silane. The detailed process for coating the fluorinatedsilane is described in Example 1 of U.S. Patent Publication No.2009/10218560, incorporated by reference herein.

The wafer pair described above was bonded in a face-to-face relationshipat 220° C. for 3 minutes in a heated vacuum and under pressure with5,800 N of bonding pressure. The wafer pair was bonded togetherstrongly, and it underwent the grinding process that thinned the devicewafer to 50 μm. The bonded wafer pair was soaked in R-limonene for 24hours, and then the wafers were debonded by a peel-off process using apeel-off debonder (ZoneBOND™ Separation Tool, obtained from BrewerScience, Inc., Rolla, Mo.). During the peel-off debonding process, thedevice wafer was held by vacuum on a flat surface, and the carrier wafer(silanated wafer) was held tightly by a metal clamp. The device waferwas then separated from the carrier wafer by peeling the clamp.

Example 7 Thick Polysulfone with Thin Bonding Composition D

In this formulation, 280 grams of polysulfone (Ultrason E2020P; BASF,Flortham Park, N.J.) were dissolved in 520 grams of dimethylacetamide(Sigma-Aldrich, St. Louis, Mo.). The mixture was allowed to stir at roomtemperature until the polysulfone dissolved to form a solution. Thesolution had 35% solids.

The above polysulfone solution was spin-coated on a 200-mm silicon waferat a spin speed of 600 rpm for 60 seconds. The coated wafer was bakedfor 2 minutes at 80° C. and then for 2 minutes at 150° C. and then for 5minutes at 180° C. The thickness of resulting polysulfone film was 51.64μm. Bonding Composition D from Example 4 was then spin-coated on top ofthe polysulfone film at a spin speed of 1400 rpm for 60 seconds. Thewafer was baked at 80° C. for 2 minutes, then at 150° C. for 2 minutes,and then at 180° C. for 5 minutes. The total thickness of the dilutedWaferBOND® HT-10.10 film was about 2 μm.

The wafer pair was soaked for 24 hours at room temperature inR-iimonene, and the wafers were then separated using a peel debonder(ZoneBOND™ Separation Tool).

Example 8 Thick Polysulfone with Thin COC Bonding Composition C

In this formulation, 280 grams of polysulfone (Ultrason E2020P) weredissolved in 520 grams of dimethylacetamide (Sigma-Aldrich, St. Louis,Mo.). The mixture was stirred at room temperature until the polysulfonedissolved to form a solution.

The above polysulfone solution was spin-coated on a 200-mm silicon waferat a spin speed of 600 rpm for 60 seconds. The coated wafer was baked at80° C. for 2 minutes, then at 150° C. for 2 minutes, and then at 180° C.for 5 minutes to remove the casting solvent completely. The thickness ofthe polysulfone film was 52.9 μm. COC Bonding Composition C from Example3 was then spin-coated on top of the polysulfone film at a spin speed of1,400 rpm for 60 seconds. The wafer was baked at 80° C. for 2 minutes,then at 150° C. for 2 minutes, and then at 180° C. for 5 minutes. Thetotal thickness of COC Bonding Composition C was about 2 μm.

The wafer pair above was soaked for 24 hours at room temperature inR-limonene and then separated using a peel debonder (ZoneBOND™Separation Tool).

Example 9

Thick COC Bonding Composition A and a >20-1 μm Film of COC BondingComposition B for Slide Debonding

In this Example, 10 mL aliquots of the COC Bonding Composition A fromExample 1, a cyclic olefin polymer coating layer designed to flowsufficiently at 270° C. to achieve effective bonding between the coatedsubstrate and a second substrate, was spin-coated twice on a 200-mmsilicon wafer. The first spin-coating was carried out at 600 rpm for 60seconds, and the second spin-coating was carried out at 800 rpm for 60seconds. After each coating, the wafer was baked at 80° C. for 2minutes, then at 150° C. for 2 minutes, and then at 220° C. for 5minutes. The thickness of the resulting COC Bonding Composition A filmwas 99.14 μm.

COC Bonding Composition B from Example 2, a cyclic olefin polymercoating layer designed to flow sufficiently at 220° C. to achieveeffective bonding between the coated substrate and a second substrate,was spin-coated on the same wafer that was coated with COC BondingComposition A. COC Bonding Composition B was coated at a spin speed of1500 rpm for 60 seconds. The wafer was baked at 80° C. for 2 minutes,then at 150° C. for 2 minutes, and then at 220° C. for 5 minutes. Thethickness of the resulting COC Bonding Composition B film was about 29μm.

The wafer described above was bonded in a face-to-face relationship withanother 200-mm silicon wafer under heated vacuum at 220° C. for 3minutes in a pressure chamber with 5,800 N of bonding pressure.

A slide debonding process using a slide debonder (obtained from BrewerScience, Inc.) separated the bonded wafer pair. The debonding processwas carried out at a debonding rate of 2 mm/second and at a temperatureof 220° C.

Example 10 Poly(vinyl pyridine) and COC Bonding Composition B Cleanedwith HCl Solution

In this formulation, 2 grams of poly(vinyl pyridine) (obtained fromSigma-Aldrich, St. Louis, Mo.) were dissolved in cyclopentanone. Themixture was allowed to stir at room temperature until the polymerdissolved. The total weight concentration of poly(vinyl pyridine) incyclopentanone was 2%. The solution was filtered through a 0.1-μmfilter.

The above poly(vinyl pyridine) composition was spin-coated on a 100-mmsilicon wafer at a spin speed of 2,000 rpm for 60 seconds. The coatedwafer was baked at 80° C. for 2 minutes and then at 220° C. for 2minutes. The thickness of the resulting poly(vinyl pyridine) film was0.0579 μm (57.9 nm). COC Bonding Composition B was then spin-coated ontop of the poly(vinyl pyridine) film at a spin speed of 1,100 rpm for 60seconds. The wafer was baked at 80° C. for 2 minutes, then at 160° C.for 2 minutes, and then at 220° C. for 6 minutes. The total thickness ofthe resulting polymer film was about 22 μm.

The coated wafer was dipped in 1% hydrochloride (HCl) aqueous solutionat room temperature for about 4 to 5 hours until the COC BondingComposition B film lifted off from the wafer. The wafer was clean byvisual observation, but some residue was still evident when it wasviewed under a microscope.

Example 11 Poly(vinyl pyridine) and COC Bonding Composition B Cleanedwith Acetic Acid Solution

A wafer was prepared with the same compositions and in the same manneras the one in Example 10. The coated wafer was dipped in 50% acetic acidaqueous solution at room temperature for about 4 to 5 hours until theCOC Bonding Composition B film lifted off the wafer.

The wafer cleaned with the acetic acid solution was clean by visualobservation, but some residue was still evident when it was viewed undera microscope.

Example 12 Poly(vinyl pyridine) and COC Bonding Composition B Cleanedwith R-limonene, Cyclopentanone, and Isopropanol

Another wafer coated with the same formulation and in the same manner asin Example 10 was allowed to spin at room temperature at a speed of 900rpm while R-limonene was dispensed for 400 seconds as the first cleaningsolvent to remove the COC Bonding Composition B film. Then furthercleaning was performed at room temperature by dispensing cyclopentanoneat a spin speed of 900 rpm for 400 seconds to remove the poly(vinylpyridine) polymer film. The wafer was spin rinsed with isopropanol for120 seconds at a spin speed of 900 rpm. Final drying was performed byspinning the wafer at a speed of 1200 rpm for 60 seconds. The wafercleaned by this process was defect-free by visual observation.

Example 13 Poly(vinyl pyridine) and COC Bonding Composition B Cleanedwith R-limonene and Isopropanol

Another wafer coated with the same formulation and in the same manner asin Example 10 was allowed to spin at room temperature at a speed of 900rpm while R-limonene was dispensed for 400 seconds as the first cleaningsolvent to remove the COC Bonding Composition B film. Then furthercleaning was performed at room temperature by dispensing isopropanol for400 seconds at a spin speed of 900 rpm to remove the poly(vinylpyridine) polymer film. Final drying was performed by spinning the waferat a speed of 1,200 rpm for 60 seconds. The wafer cleaned by thisprocess was defect-free by visual observation.

Example 14 ProLIFT® 100-16 Coating and WaferBOND® HT-10.10 Material

ProLIFT® 100-16 coating (obtained from Brewer Science, Inc., Rolla, Mo.)was spin-coated on a 200-mm silicon wafer at 3,000 rpm for 90 seconds.The coated wafer was baked at 120° C. for 90 seconds and then at 205° C.for 90 seconds to produce a layer that was about 1 μm thick. WaferBOND®HT-10.10 material was spin-coated on top of the ProLIFT® 100-16 film at1,500 rpm for 30 seconds. The wafer was baked at 120° C. for 2 minutesand then at 160° C. for 2 minutes to produce a layer that was about 16μm thick. Another 200-mm silicon wafer was bonded to the coated wafer ina face-to-face relationship at 220° C. for 3 minutes under a pressure of15 psi for 1 minute. The bonded wafer pair was cooled to 160° C. for 1minute and gradually to room temperature. The bonded wafer pair wasseparated by using a slide debonder at a rate of 2.00 mm/second and at atemperature of 200° C.

The coating on the debonded wafer was cleaned first by dispensing1-dodecene at a spin speed of 250 rpm for 60 seconds to remove theWaferBOND® HT-10.10 polymeric film and then by dispensing ProLIFT®Remover (obtained from Brewer Science, Inc., Rolla, Mo.) at a spin speedof 300 rpm for 10 seconds to clean the ProLIFT® film. The wafer wasdried by spinning at a speed of 1,400 rpm for 15 seconds. The wafer wasvisually defect-free after cleaning.

Example 15

ProLIFT® 100 Coating and COC Bonding Composition B

ProLIFT® 100-16 coating was spin-coated on a 200-mm silicon wafer at3,000 rpm for 90 seconds. The coated wafer was baked at 100° C. for 120seconds and then 245° C. for 60 seconds. COC Bonding Composition B fromExample 2 was spin-coated on top of the ProLIFT® 100-16 film at 300 rpmfor 5 seconds. The speed was ramped up, and the wafer was spun at 1,200rpm for 60 seconds. The coated wafer was baked at 60° C. for 60 seconds,then at 80° C. for 60 seconds, and then at 220° C. for 120 seconds.

The wafer was cleaned first by using R-limonene to remove the COCBonding Composition B polymer film and then by dispensing PD523-ADdeveloper (JSR Microelectronics, Sunnyvale, Calif.) to remove theProLIFT® 100-16 film. The specific cleaning procedure was as follows:

Cleaning the COC Bonding Composition B:

-   -   1. Puddle R-limonene: 0 rpm for 60 seconds    -   2. Spin off: 2,000 rpm for 5 seconds    -   3. Manually dispense R-limonene: 500 rpm for 60 seconds    -   4. Spin off: 2,000 rpm for 5 seconds    -   5. Manually dispense isopropanol to rinse: 500 rpm for 30        seconds    -   6. Spin dry: 2,000 rpm for 15 seconds

Cleaning the ProLIFT® 100-16 coating:

-   -   1. Puddle PD523-AD developer: 0 rpm for 20 seconds    -   2. Spin off: 2,000 rpm for 5 seconds    -   3. Manually dispense deionized water: 500 rpm for 20 seconds    -   4. Manually dispense isopropanol to rinse: 500 rpm for 5 seconds    -   5. Spin dry: 2,000 rpm for 15 seconds

The wafer was confirmed to be clean by defect inspection using a CandelaCS20 tool (obtained from KLA Tencor, Milpitas, Calif.).

Example 16 WGF 300-310 Material and COC Bonding Composition B

WGF 300-310 material (a developer soluble gap fill composition obtainedfrom Brewer Science, Inc., Rolla, Mo.) was spin-coated onto a 200-mmsilicon wafer at 3,000 rpm for 90 seconds. The coated wafer was baked at100° C. for 120 seconds and then at 245° C. for 60 seconds to produce afilm that was about 720 Å thick. COC Bonding Composition B from Example2 was spin-coated on the top of the WGF 300-310 film at 300 rpm for 5seconds, and then the speed was ramped up and the wafer was spun at1,200 rpm for 60 seconds. The coated wafer was then baked at 60° C. for60 seconds, then at 80° C. for 60 seconds, and then at 220° C. for 120seconds.

The wafer was cleaned first by using R-limonene to remove the COCBonding Composition B polymer film and then by dispensing PD523-ADdeveloper to remove the WGF 300-310 film. The specific cleaningprocedure was as follows:

Cleaning the COC Bonding Composition B

-   -   1. Puddle R-limonene: 0 rpm for 60 seconds    -   2. Spin off: 1,500 rpm for 5 seconds    -   3. Manually dispense R-limonenc: 500 rpm for 60 seconds    -   4. Spin off: 1,500 rpm for 5 seconds    -   5. Manually dispense isopropanol for rinsing: 500 rpm for 0        seconds    -   6. Spin dry: 2,000 rpm for 15 seconds

Cleaning the WGF 300-310 coating:

-   -   1. Puddle PD523-AD developer: 0 rpm for 20 seconds    -   2. Spin off: 1,500 rpm for 5 seconds    -   3. Manually dispense deionized water: 500 rpm for 20 seconds    -   4. Manually dispense isopropanol for rinsing: 500 rpm for 5        seconds    -   5. Spin dry: 2,000 rpm for 15 seconds

The wafer was confirmed to be clean by defect inspection using a CandelaCS20 tool.

Example 17 WGF 300-310 Material, COC Bonding Composition A, and COCBonding Composition B

WGF 300-310 material was spin-coated on a 100-mm silicon wafer at 3,000rpm for 90 seconds. The wafer was baked at 100° C. for 120 seconds andthen at 245° C. for 60 seconds. The thickness of the WGF 300-310 filmwas 0.0632 μm (63.2 nm). COC Bonding Composition A from Example 1 wasspin-coated on top of the WGF 300-310 film at a speed of 600 rpm for 60seconds. The wafer was then baked at 80° C. for 2 minutes, then at 150°C. for 2 minutes, and then 220° C. for 5 minutes. The thickness of theCOC Bonding Composition A layer was 41 μm. COC Bonding Composition Bfrom Example 2 was spin-coated on top of the COC Bonding Composition Afilm at a speed of 1,400 rpm for 60 seconds. The wafer was then baked at80° C. for 2 minutes, then at 150° C. for 2 minutes, and then at 220° C.for 5 minutes. The thickness of the COC Bonding Composition B layer was8.2 μm.

The wafer described above was first cleaned by immersing it inR-limonene for 24 hours to remove the COC Bonding Composition A and Bpolymer layers. Then a second step to clean the WGF 300-310 film withPD523-AD developer was carried out as follows:

-   -   1. Puddle PD523-AD developer: 0 rpm for 20 seconds    -   2. Spin off: 2,000 rpm for 5 seconds    -   3. Manually dispense deionized water: 500 rpm for 20 seconds    -   4. Manually dispense isopropanol to rinse: 500 rpm for 5 seconds    -   5. Spin dry: 2,000 rpm for 15 seconds

The wafer was clean, by visual observation.

Example 18 Using Multiple Layers to Assist in ZoneBOND™ Edge Cutting

An approximately 1-μm thick layer of WaferBOND® HT-10.10 was coated ontoa 3-5-mm wide ring around the edge of the surface of a 200-mm siliconcarrier wafer. This wafer was baked at 110° C. for 2 minutes, followedby a second bake at 160° C. for 2 minutes. A fluorinated silane((heptadecafluoro-1,1,2,2-tetrahydradecyl) trichlorosilane, a perfluorocompound with primarily C₁₂, sold under the name Fluorinert by 3M) wasdiluted to a 1% solution using FC-40 solvent (obtained from 3M). Thesolution was spin-coated onto the center section of the carrier. Thecarrier was baked on a hotplate at 100° C. for 1 minute, rinsed withFC-40 solvent in a spin coater and baked on a hotplate at 100° C. for anadditional 1 minute.

The surface of another 200-mm silicon device wafer was coated with a COCbonding composition via spin-coating. This wafer was baked at 80° C. for2 minutes followed by 120° C. for 2 minutes and finally 220° C. for 2minutes. The device and carrier wafers were bonded in a face-to-facerelationship under vacuum at 220° C. for 3 minutes in a heated vacuumand pressure chamber.

The assembly was soaked in 1-dodecene for approximately one hour tosoften and partially dissolve the thin layer of WaferBOND® HT-10.10 atthe edge of the carrier. The 1-dodecene did not affect the bulk of theexperimental bonding adhesive, only the WaferBOND® HT-10.10. The carrierwas separated from the assembly using a ZoneBOND™ Separation Tool.

1. A temporary bonding method comprising: providing a stack comprising:a first substrate having a back surface and a device surface; a firstbonding layer adjacent said device surface and having a softeningtemperature; a second bonding layer adjacent said first bonding layerand having a softening temperature, wherein the softening temperature ofsaid first bonding layer is at least about 20° C. greater than thesoftening temperature of said second bonding layer; and a secondsubstrate having a carrier surface, said second bonding layer beingadjacent said carrier surface; and separating said first and secondsubstrates.
 2. The method of claim 1, wherein said first bonding layerhas a thickness T₁ of at least about 24 μm.
 3. The method of claim 1,wherein said second bonding layer has a thickness T₃ of less than about35 μm.
 4. The method of claim 1, wherein said first bonding layer has asoftening point of at least about 100° C.
 5. The method of claim 1,wherein said second bonding layer has a softening point of less thanabout 220° C.
 6. The method of claim 1, wherein said first bonding layeris formed from a composition comprising a polymer or oligomer dissolvedor dispersed in a solvent system, said polymer or oligomer beingselected from the group consisting of polymers and oligomers of cyclicolefins, epoxies, acrylics, silicones, styrenics, vinyl halides, vinylesters, polyamides, polyimides, polysulfones, polyethersulfones, cyclicolefins, polyolefin rubbers, and polyurethanes, ethylene-propylenerubbers, polyamide esters, polyimide esters, polyacetals, and polyvinylbuterol.
 7. The method of claim 1, wherein said second bonding layer isformed from a composition comprising a polymer or oligomer dissolved ordispersed in a solvent system, said polymer or oligomer being selectedfrom the group consisting of polymers and oligomers of cyclic olefins,epoxies, acrylics, silicones, styrenics, vinyl halides, vinyl esters,polyamides, polyimides, polysulfones, polyethersulfones, cyclic olefins,polyolefin rubbers, and polyurethanes, ethylene-propylene rubbers,polyamide esters, polyimide esters, polyacetals, and polyvinyl buterol.8. The method of claim 1, wherein said device surface comprises an arrayof devices selected from the group consisting of integrated circuits;MEMS; microsensors; power semiconductors; light-emitting diodes;photonic circuits; interposers; embedded passive devices; andmicrodevices fabricated on or from silicon, silicon-germanium, galliumarsenide, and gallium nitride.
 9. The method of claim 1, wherein saidsecond substrate comprises a material selected from the group consistingof silicon, sapphire, quartz, metal, glass, and ceramics.
 10. The methodof claim 1, said device surface comprising at least one structureselected from the group consisting of: solder bumps; metal posts; metalpillars; and structures formed from a material selected from the groupconsisting of silicon, polysilicon, silicon dioxide, silicon(oxy)nitride, metal, low k dielectrics, polymer dielectrics, metalnitrides, and metal silicides.
 11. The method of claim 1, furthercomprising subjecting said stack to processing selected from the groupconsisting of back-grinding, chemical-mechanical polishing, etching,metal and dielectric deposition, patterning, passivation, annealing, andcombinations thereof, prior to separating said first and secondsubstrates.
 12. The method of claim 1, wherein said separating comprisesheating said stack to a temperature sufficiently high so as to softensaid second bonding layer sufficiently to allow said first and secondsubstrates to be separated.
 13. The method of claim 12, furthercomprising removing said first bonding layer from said first substrateafter said separating.
 14. The method of claim 12, wherein at least someof said first bonding layer remains on said first substrate after saidseparating and is present during subsequent processing steps.
 15. Anarticle comprising: a first substrate having a back surface and a devicesurface; a first bonding layer adjacent said device surface and having asoftening temperature; a second bonding layer adjacent said firstbonding layer and having a softening temperature, wherein the softeningtemperature of said first bonding layer is at least about 20° C. greaterthan the softening temperature of said second bonding layer; and asecond substrate having a carrier surface, said second bonding layerbeing adjacent said carrier surface.
 16. The article of claim 15,wherein said first bonding layer has a thickness T₁ of at least about 24μm.
 17. The article of claim 15, wherein said second bonding layer has athickness T₃ of less than about 35 μm.
 18. The article of claim 15,wherein said first bonding layer has a softening point of at least about100° C.
 19. The article of claim 15, wherein said second bonding layerhas a softening point of less than about 220° C.
 20. The article ofclaim 15, wherein said first bonding layer is formed from a compositioncomprising a polymer or oligomer dissolved or dispersed in a solventsystem, said polymer or oligomer being selected from the groupconsisting of polymers and oligomers of cyclic olefins, epoxies,acrylics, silicones, styrenics, vinyl halides, vinyl esters, polyamides,polyimides, polysulfones, polyethersulfones, cyclic olefins, polyolefinrubbers, and polyurethanes, ethylene-propylene rubbers, polyamideesters, polyimide esters, polyacetals, and polyvinyl buterol.
 21. Thearticle of claim 15, wherein said second bonding layer is formed from acomposition comprising a polymer or oligomer dissolved or dispersed in asolvent system, said polymer or oligomer being selected from the groupconsisting of polymers and oligomers of cyclic olefins, epoxies,acrylics, silicones, styrenics, vinyl halides, vinyl esters, polyamides,polyimides, polysulfones, polyethersulfones, cyclic olefins, polyolefinrubbers, and polyurethanes, ethylene-propylene rubbers, polyamideesters, polyimide esters, polyacetals, and polyvinyl buterol.
 22. Thearticle of claim 15, wherein said device surface comprises an array ofdevices selected from the group consisting of integrated circuits; MEMS;microsensors; power semiconductors; light-emitting diodes; photoniccircuits; interposers; embedded passive devices; and microdevicesfabricated on or from silicon, silicon-germanium, gallium arsenide, andgallium nitride.
 23. The article of claim 15, wherein said secondsubstrate comprises a material selected from the group consisting ofsilicon, sapphire, quartz, metal, glass, and ceramics.
 24. The articleof claim 15, said device surface comprising at least one structureselected from the group consisting of: solder bumps; metal posts; metalpillars; and structures formed from a material selected from the groupconsisting of silicon, polysilicon, silicon dioxide, silicon(oxy)nitride, metal, low k dielectrics, polymer dielectrics, metalnitrides, and metal silicides.
 25. A temporary bonding methodcomprising: providing a stack comprising: a first substrate having aback surface and a device surface; a first rigid layer adjacent saiddevice surface; a bonding layer adjacent said first rigid layer; and asecond substrate having a carrier surface, said bonding layer beingadjacent said carrier surface, wherein said stack further comprises oneor both of the following: a lift-off layer between said device surfaceand said first rigid layer; or a second rigid layer between said bondinglayer and said carrier surface; and separating said first and secondsubstrates.
 26. The method of claim 25, said first rigid layer andbonding layer having respective softening temperatures, wherein thesoftening temperature of said first rigid layer is at least about 20° C.greater than the softening temperature of said bonding layer.
 27. Themethod of claim 25, wherein said first rigid layer has a thickness T₃ offrom about 1 μm to about 35 μm.
 28. The method of claim 25, wherein saidbonding layer has a thickness T₃ of from about 1 μm to about 35 μm. 29.The method of claim 25, wherein said stack comprises said lift-offlayer, and said lift-off layer has a thickness T₁ of less than about 3μm.
 30. The method of claim 25, wherein said stack comprises said secondrigid layer, and said second rigid layer has a thickness T₃ of fromabout 1 μm to about 35 μm.
 31. The method of claim 25, wherein saidstack comprises said second rigid layer, and said second rigid layer andsaid bonding layer have respective softening temperatures, and thesoftening temperature of said second rigid layer is at least about 20°C. greater than the softening temperature of said bonding layer.
 32. Themethod of claim 25, wherein said first rigid layer has a softening pointof at least about 100° C.
 33. The method of claim 25, wherein saidbonding layer has a softening point of less than about 220° C.
 34. Themethod of claim 25, wherein said bonding layer is formed from acomposition comprising a polymer or oligomer dissolved or dispersed in asolvent system, said polymer or oligomer being selected from the groupconsisting of polymers and oligomers of cyclic olefins, epoxies,acrylics, silicones, styrenics, vinyl halides, vinyl esters, polyamides,polyimides, polysulfones, polyethersulfones, cyclic olefins, polyolefinrubbers, and polyurethanes, ethylene-propylene rubbers, polyamideesters, polyimide esters, polyacetals, and polyvinyl buterol.
 35. Themethod of claim 25, wherein said first rigid layer is formed from acomposition comprising a polymer or oligomer dissolved or dispersed in asolvent system, said polymer or oligomer being selected from the groupconsisting of polymers and oligomers of cyclic olefins, epoxies,acrylics, silicones, styrenics, vinyl halides, vinyl esters, polyamides,polyimides, polysulfones, polyethersulfones, cyclic olefins, polyolefinrubbers, and polyurethanes, ethylene-propylene rubbers, polyamideesters, polyimide esters, polyacetals, and polyvinyl buterol.
 36. Themethod of claim 25, wherein said stack comprises said lift-off layer,and said lift-off layer is formed from a composition comprising apolymer dissolved or dispersed in a solvent system, said polymer beingselected from the group consisting of poly(vinyl pyridine) and polyamicacids.
 37. The method of claim 25, wherein said stack comprises saidsecond rigid layer, and said second rigid layer is formed from acomposition comprising a polymer or oligomer dissolved or dispersed in asolvent system, said polymer or oligomer being selected from the groupconsisting of polymers and oligomers of cyclic olefins, epoxies,acrylics, silicones, styrenics, vinyl halides, vinyl esters, polyamides,polyimides, polysulfones, polyethersulfones, cyclic olefins, polyolefinrubbers, and polyurethanes, ethylene-propylene rubbers, polyamideesters, polyimide esters, polyacetals, and polyvinyl buterol.
 38. Themethod of claim 25, wherein said device surface comprises an array ofdevices selected from the group consisting of integrated circuits; MEMS;microsensors; power semiconductors; light-emitting diodes; photoniccircuits; interposers; embedded passive devices; and microdevicesfabricated on or from silicon, silicon-germanium, gallium arsenide, andgallium nitride.
 39. The method of claim 25, wherein said secondsubstrate comprises a material selected from the group consisting ofsilicon, sapphire, quartz, metal, glass, and ceramics.
 40. The method ofclaim 25, said device surface comprising at least one structure selectedfrom the group consisting of: solder bumps; metal posts; metal pillars;and structures formed from a material selected from the group consistingof silicon, polysilicon, silicon dioxide, silicon (oxy)nitride, metal,low k dielectrics, polymer dielectrics, metal nitrides, and metalsilicides.
 41. The method of claim 25, further comprising subjectingsaid stack to processing selected from the group consisting ofback-grinding, chemical-mechanical polishing, etching, metal anddielectric deposition, patterning, passivation, annealing, andcombinations thereof, prior to separating said first and secondsubstrates.
 42. The method of claim 25, wherein said separatingcomprises one or both of: heating said stack to a temperaturesufficiently high so as to soften said bonding layer sufficiently toallow said first and second substrates to be separated; or exposing saidstack to a remover solution so as to dissolve said lift-off layer, ifpresent.
 43. An article comprising: a first substrate having a backsurface and a device surface; a first rigid layer adjacent said devicesurface; a bonding layer adjacent said first rigid layer; and a secondsubstrate having a carrier surface, said bonding layer being adjacentsaid carrier surface, wherein said article further comprises one or bothof the following: a lift-off layer between said device surface and saidfirst rigid layer; or a second rigid layer between said bonding layerand said carrier surface.
 44. The article of claim 43, said first rigidlayer and bonding layer having respective softening temperatures,wherein the softening temperature of said first rigid layer is at leastabout 20° C. greater than the softening temperature of said bondinglayer.
 45. The article of claim 43, wherein said first rigid layer has athickness T₃ of from about 1 μm to about 35 μm.
 46. The article of claim43, wherein said bonding layer has a thickness T₃ of from about 1 μm toabout 35 μm.
 47. The article of claim 43, wherein said article comprisessaid lift-off layer, and said lift-off layer has a thickness T₁ of lessthan about 3 μm.
 48. The article of claim 43, wherein said articlecomprises said second rigid layer, and said second rigid layer has athickness T₃ of from about 1 μm to about 35 μm.
 49. The article of claim43, wherein said article comprises said second rigid layer, and saidsecond rigid layer and said bonding layer have respective softeningtemperatures, and the softening temperature of said second rigid layeris at least about 20° C. greater than the softening temperature of saidbonding layer.
 50. The article of claim 43, wherein said first rigidlayer has a softening point of at least about 100° C.
 51. The article ofclaim 43, wherein said bonding layer has a softening point of less thanabout 220° C.
 52. The article of claim 43, wherein said bonding layer isformed from a composition comprising a polymer or oligomer dissolved ordispersed in a solvent system, said polymer or oligomer being selectedfrom the group consisting of polymers and oligomers of cyclic olefins,epoxies, acrylics, silicones, styrenics, vinyl halides, vinyl esters,polyamides, polyimides, polysulfones, polyethersulfones, cyclic olefins,polyolefin rubbers, and polyurethanes, ethylene-propylene rubbers,polyamide esters, polyimide esters, polyacetals, and polyvinyl buterol.53. The article of claim 43, wherein said first rigid layer is formedfrom a composition comprising a polymer or oligomer dissolved ordispersed in a solvent system, said polymer or oligomer being selectedfrom the group consisting of polymers and oligomers of cyclic olefins,epoxies, acrylics, silicones, styrenics, vinyl halides, vinyl esters,polyamides, polyimides, polysulfones, polyethersulfones, cyclic olefins,polyolefin rubbers, and polyurethanes, ethylene-propylene rubbers,polyamide esters, polyimide esters, polyacetals, and polyvinyl buterol.54. The article of claim 43, wherein said article comprises saidlift-off layer, and said lift-off layer is formed from a compositioncomprising a polymer dissolved or dispersed in a solvent system, saidpolymer being selected from the group consisting of poly(vinyl pyridine)and polyamic acids.
 55. The article of claim 43, wherein said articlecomprises said second rigid layer, and said second rigid layer is formedfrom a composition comprising a polymer or oligomer dissolved ordispersed in a solvent system, said polymer or oligomer being selectedfrom the group consisting of polymers and oligomers of cyclic olefins,epoxies, acrylics, silicones, styrenics, vinyl halides, vinyl esters,polyamides, polyimides, polysulfones, polyethersulfones, cyclic olefins,polyolefin rubbers, and polyurethanes, ethylene-propylene rubbers,polyamide esters, polyimide esters, polyacetals, and polyvinyl buterol.56. The article of claim 43, wherein said device surface comprises anarray of devices selected from the group consisting of integratedcircuits; MEMS; microsensors; power semiconductors; light-emittingdiodes; photonic circuits; interposers; embedded passive devices; andmicrodevices fabricated on or from silicon, silicon-germanium, galliumarsenide, and gallium nitride.
 57. The article of claim 43, wherein saidsecond substrate comprises a material selected from the group consistingof silicon, sapphire, quartz, metal, glass, and ceramics.
 58. Thearticle of claim 43, said device surface comprising at least onestructure selected from the group consisting of: solder bumps; metalposts; metal pillars; and structures formed from a material selectedfrom the group consisting of silicon, polysilicon, silicon dioxide,silicon (oxy)nitride, metal, low k dielectrics, polymer dielectrics,metal nitrides, and metal silicides.
 59. A temporary bonding methodcomprising: providing a stack comprising: a first substrate having aback surface and a device surface, said device surface having aperipheral region and a central region; a second substrate having acarrier surface; an edge bond adjacent said peripheral region and saidcarrier surface; and at least one layer selected from the groupconsisting of: a lift-off layer between said edge bond and said devicesurface; a lift-off layer between said edge bond and said carriersurface; an adhesion promoter layer between said edge bond and saiddevice surface; an adhesion promoter layer between said edge bond andsaid carrier surface; a bonding layer between said edge bond and saiddevice surface; and a bonding layer between said edge bond and saidcarrier surface; and separating said first and second substrates. 60.The method of claim 59, said edge bond being absent from at least someof said central region so as to form a fill zone.
 61. The method ofclaim 60, said stack further comprising a fill layer in said fill zone.62. The method of claim 61, wherein said stack comprises at least onelayer selected from the group consisting of: a bonding layer betweensaid edge bond and said device surface; and a bonding layer between saidedge bond and said carrier surface.
 63. The method of claim 59, whereinsaid device surface comprises an array of devices selected from thegroup consisting of integrated circuits; MEMS; microsensors; powersemiconductors; light-emitting diodes; photonic circuits; interposers;embedded passive devices; and microdevices fabricated on or fromsilicon, silicon-germanium, gallium arsenide, and gallium nitride. 64.The method of claim 59, wherein said second substrate comprises amaterial selected from the group consisting of silicon, sapphire,quartz, metal, glass, and ceramics.
 65. The method of claim 59, saiddevice surface comprising at least one structure selected from the groupconsisting of: solder bumps; metal posts; metal pillars; and structuresformed from a material selected from the group consisting of silicon,polysilicon, silicon dioxide, silicon (oxy)nitride, metal, low kdielectrics, polymer dielectrics, metal nitrides, and metal silicides.66. The method of claim 59, wherein said edge bond has a width “D” offrom about 2 mm to about 15 mm.
 67. The method of claim 59, wherein saidedge bond is formed is formed from a composition comprising a polymer oroligomer dissolved or dispersed in a solvent system, said polymer oroligomer being selected from the group consisting of polymers andoligomers of cyclic olefins, epoxies, acrylics, silicones, styrenics,vinyl halides, vinyl esters, polyamides, polyimides, polysulfones,polyethersulfones, cyclic olefins, polyolefin rubbers, andpolyurethanes, ethylene-propylene rubbers, polyamide esters, polyimideesters, polyacetals, and polyvinyl buterol.
 68. The method of claim 59,further comprising subjecting said stack to processing selected from thegroup consisting of back-grinding, chemical-mechanical polishing,etching, metal and dielectric deposition, patterning, passivation,annealing, and combinations thereof, prior to separating said first andsecond substrates.
 69. An article comprising: a first substrate having aback surface and a device surface, said device surface having aperipheral region and a central region; a second substrate having acarrier surface; an edge bond adjacent said peripheral region and saidcarrier surface; and at least one layer selected from the groupconsisting of: a lift-off layer between said edge bond and said devicesurface; a lift-off layer between said edge bond and said carriersurface; an adhesion promoter layer between said edge bond and saiddevice surface; an adhesion promoter layer between said edge bond andsaid carrier surface; a bonding layer between said edge bond and saiddevice surface; and a bonding layer between said edge bond and saidcarrier surface.
 70. The article of claim 69, said edge bond beingabsent from at least some of said central region so as to form a fillzone.
 71. The article of claim 70, said article further comprising afill material in said fill zone.
 72. The article of claim 71, whereinsaid stack comprises at least one layer selected from the groupconsisting of: a bonding layer between said edge bond and said devicesurface; and a bonding layer between said edge bond and said carriersurface.
 73. The article of claim 69, wherein said first substratecomprises a device wafer having a device surface comprising an array ofdevices selected from the group consisting of integrated circuits; MEMS;microsensors; power semiconductors; light-emitting diodes; photoniccircuits; interposers; embedded passive devices; and microdevicesfabricated on or from silicon, silicon-germanium, gallium arsenide, andgallium nitride.
 74. The article of claim 69, wherein said secondsubstrate comprises a material selected from the group consisting ofsilicon, sapphire, quartz, metal, glass, and ceramics.
 75. The articleof claim 69, said device surface comprising at least one structureselected from the group consisting of: solder bumps; metal posts; metalpillars; and structures formed from a material selected from the groupconsisting of silicon, polysilicon, silicon dioxide, silicon(oxy)nitride, metal, low k dielectrics, polymer dielectrics, metalnitrides, and metal silicides.
 76. The article of claim 69, wherein saidedge bond has a width “D” of from about 2 mm to about 15 mm.
 77. Thearticle of claim 69, wherein said edge bond is formed from a compositioncomprising a polymer or oligomer dissolved or dispersed in a solventsystem, said polymer or oligomer being selected from the groupconsisting of polymers and oligomers of cyclic olefins, cyclic olefins,epoxies, acrylics, silicones, styrenics, vinyl halides, vinyl esters,polyamides, poly imides, polysulfones, polyethersulfones, cyclicolefins, polyolefin rubbers, and polyurethanes, ethylene-propylenerubbers, polyamide esters, polyimide esters, polyacetals, and polyvinylbuterol.
 78. A temporary bonding method comprising: providing a stackcomprising: a first substrate having a back surface and a devicesurface; a cleaning layer adjacent said device surface; a first layeradjacent said cleaning layer, said first layer being selected from thegroup consisting of bonding layers and rigid layers; and a secondsubstrate having a carrier surface, said first layer being adjacent saidcarrier surface; separating said first and second substrates; andcontacting said cleaning layer with a remover solution so as tosubstantially remove said cleaning layer and any first layer residueremaining after said separating.
 79. The method of claim 78, furthercomprising a second bonding layer between said first layer and saidcarrier surface.
 80. The method of claim 79, wherein said contactingsubstantially removes said second bonding layer.
 81. The method of claim78, wherein said separating comprises heating said stack to atemperature sufficiently high so as to soften said first layersufficiently to allow said first and second substrates to be separated.82. The method of claim 70, wherein said separating comprises heatingsaid stack to a temperature sufficiently high so as to soften saidsecond bonding layer sufficiently to allow said first and secondsubstrates to be separated.